MB84VD2008 Overview
( DataSheet : .. ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50111-1E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 8M (× 16) FLASH MEMORY & 2M (× 16) STATIC RAM MB84VD2008-10/MB84VD2009-10.
MB84VD2008 Key Features
- Power supply voltage of 2.7 to 3.6 V
- High performance 100 ns maximum access time
- Operating Temperature -20 to +85°C
- FLASH MEMORY
- Simultaneous operations Read-while Erase or Read-while-Program
- Minimum 100,000 write/erase cycles
- Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any bination of sectors
- Boot Code Sector Architecture MB84VD2008: Top sector MB84VD2009: Bottom sector
- Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
- Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address