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MB84VD2009 - (MB84VD2008 / MB84VD2009) 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

Download the MB84VD2009 datasheet PDF. This datasheet also covers the MB84VD2008 variant, as both devices belong to the same (mb84vd2008 / mb84vd2009) 8m (x 16) flash memory & 2m (x 16) static ram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Power supply voltage of 2.7 to 3.6 V.
  • High performance 100 ns maximum access time.
  • Operating Temperature.
  • 20 to +85°C.
  • FLASH MEMORY.
  • Simultaneous operations Read-while Erase or Read-while-Program.
  • Minimum 100,000 write/erase cycles.
  • Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase.
  • Bo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MB84VD2008_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB84VD2002 (MB84VD2002 / MB84VD2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VD2003 (MB84VD2002 / MB84VD2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
MB84VD2008 (MB84VD2008 / MB84VD2009) 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
MB84VD2108x (MB84VD2108x / MB84VD2109x) 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
MB84VD2109x (MB84VD2108x / MB84VD2109x) 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50111-1E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 8M (× 16) FLASH MEMORY & 2M (× 16) STATIC RAM MB84VD2008-10/MB84VD2009-10 s FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Simultaneous operations Read-while Erase or Read-while-Program • Minimum 100,000 write/erase cycles • Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase.