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MB84VD23481FJ-70 - 64 M (X16) FLASH MEMORY & 32 M (X16) Mobile FCRAM

General Description

Pin Name A20 to A0 A21 DQ15 to DQ0 CEf CE1r CE2r OE WE RY/BY UB LB RESET WP/ACC PE N.C.

Key Features

  • Power Supply Voltage of 2.7 V to 3.1 V.
  • High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (FCRAM).
  • Operating Temperature.
  • 30 °C to +85 °C.
  • Package 65-ball FBGA (Continued) s.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50310-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAMTM MB84VD23481FJ-70 s FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (FCRAM) • Operating Temperature −30 °C to +85 °C • Package 65-ball FBGA (Continued) s PRODUCT LINE-UP Flash Memory Power Supply Voltage ( V ) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) VCCf* = 2.7 V to 3.1 V 70 70 30 FCRAM VCCr* = 2.7 V to 3.1 V 65 65 40 *: Both VCCf and VCCr must be the same level when either part is being accessed. s PACKAGE 65-ball plastic FBGA (BGA-65P-M01) MB84VD23481FJ-70 (Continued) • FLASH MEMORY • 0.