Datasheet4U Logo Datasheet4U.com

MBM29DS163TE - (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT

Download the MBM29DS163TE datasheet PDF. This datasheet also covers the MBM29DS163BE variant, as both devices belong to the same (mbm29ds163be/te) flash memory cmos 16 m (2 m x 8/1 m x 16) bit family and are provided as variant models within a single manufacturer datasheet.

General Description

The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each.

The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages.

This device is designed to be programmed in system with standard system 1.8 V VCC supply.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The device features single 1.8 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Pollin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29DS163BE_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MBM29DL161BD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT Fujitsu
MBM29DL161BD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT Fujitsu
MBM29DL161BE-12 16M (2M x 8/1M x 16) BIT Dual Operation Fujitsu
MBM29DL161BE-70 16M (2M x 8/1M x 16) BIT Dual Operation Fujitsu
MBM29DL161BE-90 16M (2M x 8/1M x 16) BIT Dual Operation Fujitsu

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29DS163BE (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
MBM29DL161BD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL161BE (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL161TD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL161TE (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-4E FLASH MEMORY CMOS 16 M (2 M × 8/1 M × 16) BIT Dual Operation MBM29DS163TE/BE10 s DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be programmed in system with standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. Power Supply Voltage (V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DS163TE/BE10 0.2 V VCC = 2.0 V + −0.