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MBM29FS12DH - (MBM29FS12DH / MBM29BS12DH) BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT

General Description

The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each.

The device offered in a 80-ball FBGA package.

This device is designed to be programmed in-system with the standard system 1.8 V VCC supply.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The Enhanced VI/O (VCCQ) feature allows the output voltage generated on the device to be determined based on the VI/O level. This feature allows this device to operate in the 1.8 V I/O environment, driving and receiving signals to and from other 1.8 V devices on the same bus. The device features single 1.8 V power suppl.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20910-2E BURST MODE FLASH MEMORY CMOS 128M (8M × 16) BIT MBM29BS/FS12DH 15 s DESCRIPTION The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each. The device offered in a 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No.