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MBM29F002BC-55 - 2M (256K x 8) BIT FLASH MEMORY

Download the MBM29F002BC-55 datasheet PDF. This datasheet also covers the MBM29F002TC variant, as both devices belong to the same 2m (256k x 8) bit flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Single 5.0 V read, write, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection.
  • 32-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) 32-pin PLCC (Package Suffix: PD).
  • Minimum 100,000 write/erase cycles.
  • High performance 55 ns maximum access time.
  • Sector erase architecture One 16.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29F002TC_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 2M (256K × 8) BIT DS05-20868-3E MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection • 32-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) 32-pin PLCC (Package Suffix: PD) • Minimum 100,000 write/erase cycles • High performance 55 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes Any combination of sectors can be erased.