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MBM29F002BC-70 Datasheet

2m (256k X 8) Bit Flash Memory

Manufacturer: Fujitsu Semiconductor Limited

This datasheet includes multiple variants, all published together in a single manufacturer document.

MBM29F002BC-70 Overview

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 2M (256K × 8) BIT DS05-20868-3E MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90.

MBM29F002BC-70 Key Features

  • Single 5.0 V read, write, and erase Minimizes system level power requirements
  • patible with JEDEC-standard mands Pinout and software patible with single-power supply Flash Superior inadvertent write
  • 32-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) 32-pin PLCC (Package Suffix: PD)
  • Minimum 100,000 write/erase cycles
  • High performance
  • Sector erase architecture
  • Boot Code Sector Architecture T = Top sector B = Bottom sector
  • Embedded Erase™ Algorithms Automatically pre-programs and erases the chip or any sector
  • Embedded Program™ Algorithms Automatically programs and verifies data at specified address

More Datasheets from Fujitsu Semiconductor Limited

See all Fujitsu Semiconductor Limited datasheets

Part Number Description
MBM29F002BC-55 2M (256K x 8) BIT FLASH MEMORY
MBM29F002BC-90 2M (256K x 8) BIT FLASH MEMORY
MBM29F002TC-55 2M (256K x 8) BIT FLASH MEMORY
MBM29F002TC-70 2M (256K x 8) BIT FLASH MEMORY
MBM29F002TC-90 2M (256K x 8) BIT FLASH MEMORY
MBM29F004BC-70 FLASH MEMORY CMOS 4M (512K x 8) BIT
MBM29F004BC-90 FLASH MEMORY CMOS 4M (512K x 8) BIT
MBM29F004TC-70 FLASH MEMORY CMOS 4M (512K x 8) BIT
MBM29F004TC-90 FLASH MEMORY CMOS 4M (512K x 8) BIT
MBM29F016A-12 16M (2M x 8) BIT FLASH MEMORY

MBM29F002BC-70 Distributor