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MBM29F002TC-90 - 2M (256K x 8) BIT FLASH MEMORY

This page provides the datasheet information for the MBM29F002TC-90, a member of the MBM29F002TC 2M (256K x 8) BIT FLASH MEMORY family.

Datasheet Summary

Features

  • Single 5.0 V read, write, and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection.
  • 32-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) 32-pin PLCC (Package Suffix: PD).
  • Minimum 100,000 write/erase cycles.
  • High performance 55 ns maximum access time.
  • Sector erase architecture One 16.

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Datasheet preview – MBM29F002TC-90

Datasheet Details

Part number MBM29F002TC-90
Manufacturer Fujitsu
File Size 461.15 KB
Description 2M (256K x 8) BIT FLASH MEMORY
Datasheet download datasheet MBM29F002TC-90 Datasheet
Additional preview pages of the MBM29F002TC-90 datasheet.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 2M (256K × 8) BIT DS05-20868-3E MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90 s FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection • 32-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type) 32-pin PLCC (Package Suffix: PD) • Minimum 100,000 write/erase cycles • High performance 55 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes Any combination of sectors can be erased.
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