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2N6678

Manufacturer: GE

This datasheet includes multiple variants, all published together in a single manufacturer document.

2N6678 datasheet preview

Datasheet Details

Part number 2N6678
Datasheet 2N6678 2N6676 Datasheet (PDF)
File Size 441.26 KB
Manufacturer GE
Description NPN POWER TRANSISTORS
2N6678 page 2 2N6678 page 3

2N6678 Overview

These devices are optimized to provide a unique bination of ultra-low switching losses and high safe-operating area (SOA), ideally suited for off-line Switching Power Supplies, converter circuits and pulse width modulated regulators.

2N6678 Key Features

  • Switching times
  • Saturation voltages
  • Leakage currents
  • RBSOA (VCEX = 350 to 450V) at rated IC continuous
  • Continuous
  • Continuous Peak(1)

2N6678 Applications

  • 100°C maximum limits specified for

2N6678 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Microsemi Corporation Logo 2N6678 (2N66xx) NPN POWER SILICON TRANSISTOR Microsemi Corporation
Seme LAB Logo 2N6678 HIGH VOLTAGE NPN POWER TRANSISTOR Seme LAB
VPT Logo 2N6678 NPN High Power Silicon Transistor VPT
INCHANGE Logo 2N6678 NPN Transistor INCHANGE
Central Semiconductor Logo 2N6678 NPN SILICON POWER TRANSISTOR Central Semiconductor
GE logo - Manufacturer

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