JTDA150A Datasheet | GHz Technology

DESCRIPTION The JTDA-150A is a high power MON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. Low thermal resistance Solder Sealed Package reduces junction temperature, extends life. CASE OUTLINE 55KT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25o C2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 350 Watts 50 Volts 3.5 Volts 15 Amps - 65 to + 200 o C + 200 o C ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg ηc VSWR BVebo BVces h FE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance TEST CONDITIONS F = 960-1215 MHz Vcc = 36 Volts PW = Note 1 DF = Note 1 F = 1215 MHz Ie = 20 m A Ic = 60 m A Ic = 5.0A, Vce = 5 V MIN 145 24 8 45 3:1 3.5 55 20 0.5 Volts Volts o UNITS Watts Watts d B % θjc2 C/W Note 1: JTIDS Pulse = 7 Micorseconds On / Off for 3.3 Millisec, 22 % Long term duty 2: At rated pulse conditions Issue June 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz REMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 .. JTDA...