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2SA1740 Datasheet PDF

Galaxy Century Microelectronics 2SA1740

PNP Epitaxial Planar Silicon Transistor

Part No. 2SA1740
Datasheet 2SA1740 Download
Manufacturer Galaxy Century Microelectronics
Description PNP Epitaxial Planar Silicon Transistor
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2SA1740 datasheet page 1 preview

FEATURES

● High breakdown voltage.
● Adoption of MBIT process.
● Excellent hFE linearlity. Pb Lead-free

APPLICATIONS

● High-Voltage Driver

APPLICATIONS

Production specification 2SA1740 ORDERING INFORMATION Type No. Marking 2SA1740 AK SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector Current(Pulse) PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) Value Units -400 V -400 V -5 V -200 mA -400 mA 0.5 W 1.3 Note1 W -55 to +150 ℃ E042 Rev.A 1 PNP Epitaxial Planar Silicon Transistor Production specification 2SA1740

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown vo
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