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2SA1740 - Transistors

Key Features

  • High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range.
  • Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC.
  • Tj Tstg http://www. DataSheet4U. net/ Rating -400 -400 -5 -200 -400 1.3 150 -55 to +150 Unit V V V mA mA.

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SMD Type High-Voltage Driver Applications 2SA1740 Transistors Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg http://www.DataSheet4U.net/ Rating -400 -400 -5 -200 -400 1.