Kexin Electronics 2SA1740
PNP Transistors
APPLICATIONS
2SA1740 TransistorsFEATURES
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -400 -400 -5 -200 -400 1.3 150 -55 to +150 Unit V V V mA mA WELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol ICBO IEBO Testconditons VCB = -300V , IE = 0 VEB = -4V , IC = 0 -400 -400 -5 60 200 -0.8 -1.0 70 5 4...