JCET 2SA1740
PNP Transistor
FEATURES
z High breadown voltage z Excellent hFE linearlity Marking: AK SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTERMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation TJ Junction Temperature Tstg Storage Temperature RθJA Thermal Resistance from Junction to Ambient Value -400 -400 -5 -200 500 150 -55-150 250 Unit V V V mA mW ℃ ℃ ℃ /WELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CEO IC=-1mA,IB=0 V(BR)EBO IE=-10μA,IC=0 Collector cut-off current ICBO VCB=-300V,IE=0 Emitter cut-off current IEBO VEB=-4V,IC