FEATURES
Power dissipation PCM : 500 mW (Tamb=25℃) TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Collector current : -200 mA ICM Collector-base voltage V V(BR)CBO : -400 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS
(Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-ON Time Turn-OFF Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10µA, IE=0 -400 -400 -5 -0.1 -0.1 60 200 -0.8 -1 70 5 0.25 5 Ic=-1mA, IB=0 IE=-10µA, IC=0 VCB=-300V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-50mA IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA VCE=-30V, IC=-10mA VCB=-30V, IE=0, f=1MHz VCC=-150V, Ic=-50mA, IB1=...
TRANSYS