Galaxy Century Microelectronics 2SC4180
Silicon Epitaxial Planar Transistor
| Part No. | 2SC4180 |
|---|---|
| Datasheet | 2SC4180 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent hFE linearity.● High voltage and current.
● Power dissipation PC=150mW.
● Small package. Pb Lead-free Production specification 2SC4180
APPLICATIONS
● Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SC4180 D15/D16/D17/D18 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 50 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F040 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SC4180ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 120 V Collector-emitt
