2SC4180 - Silicon Epitaxial Planar Transistor

Galaxy Microelectronics

Key Features

Excellent hFE linearity.
High voltage and current.
Power dissipation PC=150mW.
Small package. Pb Lead-free Production specification 2SC4180.

2SC4180 silicon epitaxial planar transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SC4180
Manufacturer	Galaxy Microelectronics
File Size	176.08 KB
Description	Silicon Epitaxial Planar Transistor
Datasheet	2SC4180 Datasheet

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Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  High voltage and current.  Power dissipation PC=150mW.  Small package. Pb Lead-free Production specification 2SC4180 APPLICATIONS  Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SC4180 D15/D16/D17/D18 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 50 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F040 Rev.A www.gmesemi.