2SC4180 Datasheet | Kexin Semiconductor

Features Small dimension High DC current gain Transistors 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 120 120 5 50 150 150 -55 to +150 Unit V V V m A m W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage - Base-emitter voltage - Gain bandwidth product Output capacitance - Pulse test: tp 350 ìs; d 0.02. Symbol ICBO IEBO h FE Testconditons VCB = 120V, IE=0 VEB = 5V, IC=0 VCE = 6V , IC = 1m A- VCE = 6V , IC = 0.1m A VCE(sat) IC = 10m A , IB = 1m A VBE f T Cob VCE =6V , IC = 1m A VCE = 6V , IE = -1m A VCB = 30V , IE = 0 , f = 1.0MHz 0.55 50 135 100 600 580 0.07 0.59 110 1.6 2.5 0.3 0.65 V V MHz p F Min Typ Max 0.05 0.05 900 Unit ìA ìA h FE Classification Marking h FE D15 135 270 D16 200 400 D17 300 600 D18 450 900 .kexin..cn Free Datasheet...