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2SC4180 - NPN Silicon Epitaxial Transistor

Key Features

  • Small dimension High DC current gain Transistors 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 120 120 5 50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter sa.

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SMD Type NPN Silicon Epitaxial Transistor 2SC4180 Features Small dimension High DC current gain Transistors 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 120 120 5 50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulse test: tp 350 ìs; d 0.02. Symbol ICBO IEBO hFE Testconditons VCB = 120V, IE=0 VEB = 5V, IC=0 VCE = 6V , IC = 1mA* VCE = 6V , IC = 0.