• Part: 2SC4180
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: JCET
  • Size: 535.22 KB
Download 2SC4180 Datasheet PDF
JCET
2SC4180
2SC4180 is NPN Transistor manufactured by JCET.
FEATURES - High DC Current Gain APPLICATIONS - General Purpose Amplification SOT- 323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current Collector Power Dissipation RΘJA Thermal Resistance From Junction To Ambient Tj Junction Temperature Tstg Storage Temperature 150 -55~+150 Unit V V V m A m W ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE(1)- h FE(2) VCE(sat) VBE f T IC=100µA, IE=0 IC=1m A, IB=0 IE=100µA, IC=0 VCB=120V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1m A VCE=6V, IC=0.1m A IC=10m A, IB=1m A VCE=6V, IC=1m A VCE=6V, IC=1m A Collector output capacitance Cob VCB=30V, IE=0,...