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2SC4180 Datasheet PDF

JCET 2SC4180

NPN Transistor

Part No. 2SC4180
Datasheet 2SC4180 Download
Manufacturer
JCET
Description NPN Transistor
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2SC4180 datasheet page 1 preview

FEATURES

● High DC Current Gain

APPLICATIONS

● General Purpose Amplification SOT–323

MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current 50 PC Collector Power Dissipation 150 RΘJA Thermal Resistance From Junction To Ambient 833 Tj Junction Temperature Tstg Storage Temperature 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)* hFE(2) VCE(sat) VBE fT IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=120V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=0.1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCE=6V, IC=1mA Collector output capacitance Cob VCB=30V, IE=0, f=1MHz *Pulse test: pulse width ≤350μs, duty Cycle≤ 2.0%.
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