Full PDF Text Transcription for 2SC4180 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SC4180. For precise diagrams, and layout, please refer to the original PDF.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-323 Plastic-Encapsulate Transistors 2SC4180 TRANSISTOR (NPN) FEATURES High DC Current Gain APPLICATIONS Ge...
View more extracted text
180 TRANSISTOR (NPN) FEATURES High DC Current Gain APPLICATIONS General Purpose Amplification SOT–323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current 50 PC Collector Power Dissipation 150 RΘJA Thermal Resistance From Junction To Ambient 833 Tj Junction Temperature Tstg Storage Temperature 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3.