Datasheet4U Logo Datasheet4U.com

2SD1898 - Power Transistor

Key Features

  • High VCEO,VCEO=80V.
  • High IC,IC=1A(DC).
  • Good HFE Linearity.
  • Low VCE(sat).
  • Complement the 2SB1260. Pb Lead-free 2SD1898.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1898 NPN Transistor JCST
2SD1898 Power Transistor Rohm
2SD1898 Epitaxial Planar NPN Transistors Weitron Technology
2SD1898 POWER TRANSISTOR UTC
2SD1898 NPN Epitaxial Planar Silicon Transistor SeCoS

Other Datasheets by Galaxy Microelectronics

Part Number Description
2SD1899 NPN Epitaxial Planar Silicon Transistors
2SD1802 NPN Epitaxial Planar Silicon Transistors
2SD1803 NPN Epitaxial Planar Silicon Transistors
2SD1815 NPN Epitaxial Planar Silicon Transistors
2SD1819A Silicon Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production specification Power Transistor(80V,1A) FEATURES  High VCEO,VCEO=80V.  High IC,IC=1A(DC).  Good HFE Linearity.  Low VCE(sat).  Complement the 2SB1260. Pb Lead-free 2SD1898 APPLICATIONS  NPN silicon transistor. ORDERING INFORMATION Type No. Marking 2SD1898 DF SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 1A IC Collector Current -pulse PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) 2 0.5 1.3 Note1 -55 to +150 A W W ℃ E087 Rev.A www.gmesemi.