ROHM Semiconductor 2SD1898
80V 1A Middle Power Transistor
2SD1898 Middle Power Transistor (80V / 1A) Datasheet lOutline Parameter Value r VCEO 80V o IC 1A d f lFeatures e 1)Low saturation voltage, tipically VCE(sat)=150mV at IC/IB=500mA/50mA. d 2)Complementary PNP Types : 2SB1260 SOT-89 SC-62 MPT3 lInner circuit mmeensigns lApplication o LOW FREQUENCY OUTPUT AMPLIFIER ec D lPackaging specifications R ew Part No. Package Not N 2SD1898 SOT-89 (MPT3) Package size Taping code Reel size (mm) Tape width (mm) Basic ordering unit.(pcs) Marking 4540 T100 180 12 1000 DF © 2016 ROHM Co., Ltd. All rights reserved. 1/6 20160129 - Rev.002 2SD1898 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 80 V Emitter-base voltage Collector current Power dissipation VEBO IC ICP*1 PD*2 for 5 V 1 A 2 A 0.5 W Junction temperature d Range of storage temperature PD*3 2.0 Tj 150 Tstg -55 to +150 e lElectrical characteristics (Ta = 25°C) nd s Parameter Symbol Conditions e n Collecto...