Weitron Technology 2SD1898
Epitaxial Planar NPN Transistors
| Part No. | 2SD1898 |
|---|---|
| Datasheet | 2SD1898 Download |
| Manufacturer |  Weitron Technology |
| Description | Epitaxial Planar NPN Transistors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Temperature * Single pulse Pw = 20ms Symbol Limits 100 80 5 1 2 0.5 150, -55 to +150 Unit VCBO VCEO VEBO IC I CP PC Vdc Vdc Vdc A(DC) A (Pulse)* W Tj , Tstg C C unless otherwise noted )ELECTRICAL CHARACTERISTICS
(Ta=25% Parameter Symbol Collector-Base Breakdown Voltage(Ic=50uA, I E =0) Collector-Emitter Breakdown Voltage(Ic=1mA,I B=0 ) Emitter-Base Breakdown Voltage(I E =50uA, I C =0) Collector Cutoff Current(VCB=80V, I E =0) Emitter Cutoff Current(VEB=4V, IC =0) BV CBO BV CEO BVEBO ICBO IEBO Min Typ - Max - Unit 100 80 5 - V V V uA uA 1 1 WEITRON 2SD1898 C unless otherwise noted ) (Countinued)ELECTRICAL CHARACTERISTICS
(Ta=25% Min Typ Max Unit Parameter Symbol DC Current Gain (VCE=3V, Ic=500mA) Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA) Transition Frequency (VCE=10V, Ic=50mA, f=100MH...
