MLSM 2SD1898
NPN Transistor
FEATURES
● High Breakdown Voltage and Current● Excellent DC Current Gain Linearity
● Complement the 2SB1260
● Low Collector-Emitter Saturation Voltage 2SD1898 Transistor (NPN) DF BC E Marking and pin assignment SOT-89-3L top view Schematic diagram
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO IC PC RΘJA TJ,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range Value Unit 100 V 80 V 5 V 1 A 500 mW 250 °C/W -55~+150 °C Ordering Information (Example) Type 2SD1898 Package SOT-89-3L Marking DF Minimum Package(pcs) 1,000 Inner Box Quantity(pcs) 10,000 Outer Carton Quantity(pcs) Delivery Mode 40,000 7"reel Copyright©MLS Microelectronics Co., Ltd Rev 1.0 Page 1 Total 4 2SD1898 Transistor (NPN)ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Symbol Parameter V(BR)CBO V(BR)CEO V(BR)EBO ICBO...