Datasheet4U Logo Datasheet4U.com

BL3400 - N-Channel Power Mosfet

Datasheet Summary

Features

  • Electrostatic Sensitive Devices.
  • VDS (V) = 30V.
  • ID = 5.7A（VGS = 10V）.
  • RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Pb Lead-free.

📥 Download Datasheet

Datasheet preview – BL3400

Datasheet Details

Part number BL3400
Manufacturer GME
File Size 334.67 KB
Description N-Channel Power Mosfet
Datasheet download datasheet BL3400 Datasheet
Additional preview pages of the BL3400 datasheet.

📁 Similar Datasheet

  • BL34018 - high quality hands free speakerphone system (SHANGHAI BELLING)
  • BL3406B - 800mA Synchronous Buck Converter (SHANGHAI BELLING)
  • BL34118 - Voice Switched Speakerphone (SHANGHAI BELLING)
  • BL34119 - Telephone low voltage audio amplifier circuit (SHANGHAI BELLING)
  • BL3085A - RS-485 Transceivers (BELLING)
  • BL3085B - RS-485 Transceivers (BELLING)
  • BL3085E - High-speed transceiver (BELLING)
  • BL3090 - RS-485/RS-422 Transceivers (BELLING)
  • BL3102 - COMS Clock Generator/Driver (SHANGHAI BELLING)
  • BL317 - HIGH CURRENT ADJUSTABLE VOLTAGE REGULATOR (BELLING)
Other Datasheets by GME
  • BL3401 - P-Channel High Density Trench MOSDET
  • BL3401L - P-Channel MOSDET
  • BL3402 - N-Channel Power Mosfet
  • BL3404 - N-Channel Power Mosfet
  • BL3407 - P-Channel Power Mosfet
  • BL3415 - Dual P-Channel Power Mosfet
  • BL3428W - N-Channel Enhancement Mode MOSFET
  • BL3435 - P-Channel Power Mosfet

Full PDF Text Transcription

Click to expand full text
Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 5.7A（VGS = 10V）  RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL3400 3400 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a ±12 @ TA = 25 ℃ 5.7 @ TA = 70 ℃ 4.7 25 Power Dissipation 1.
Published: |