• Part: BL3400
  • Description: N-Channel Power Mosfet
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 334.67 KB
Download BL3400 Datasheet PDF
Galaxy Microelectronics
BL3400
FEATURES - Electrostatic Sensitive Devices. - VDS (V) = 30V - ID = 5.7A(VGS = 10V) - RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Pb Lead-free APPLICATIONS - N-channel enhancement mode effect transistor. - Switching application. ORDERING INFORMATION Type No. Marking SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain Current A Pulsed Drain Current a ±12 @ TA = 25 ℃ 5.7 @ TA = 70 ℃ 4.7 Power Dissipation Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃/W ℃ C273...