Galaxy Century Microelectronics BL3400
N-Channel Power Mosfet
| Part No. | BL3400 |
|---|---|
| Datasheet | BL3400 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | N-Channel Power Mosfet |
| Buy | Stock & Price |
FEATURES
● Electrostatic Sensitive Devices.● VDS (V) = 30V
● ID = 5.7A（VGS = 10V）
● RDS(ON) < 26.5mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 48mΩ (VGS = 2.5V) Pb Lead-free
APPLICATIONS
● N-channel enhancement mode effect transistor.● Switching application. ORDERING INFORMATION Type No. Marking BL3400 3400 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a ±12 @ TA = 25 ℃ 5.7 @ TA = 70 ℃ 4.7 25 Power Dissipation 1.4 Thermal resistance,Junction-to-Ambient 70 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃/W ℃ C273 Rev.A 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400 ELECTRICAL CHARACTER
