BL3400 Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor BL3400.
BL3400 Key Features
- Electrostatic Sensitive Devices
- VDS (V) = 30V
- ID = 5.7A（VGS = 10V）
- RDS(ON) < 26.5mΩ (VGS = 10V)
Datasheet Details
| Part number | BL3400 |
|---|---|
| Datasheet | BL3400-GME.pdf |
| File Size | 334.67 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power Mosfet |
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