BL3404
FEATURES
- Electrostatic Sensitive Devices.
- VDS (V) = 30V
- ID = 5.8A
- RDS(ON) < 25mΩ (VGS = 10V)
RDS(ON) < 35mΩ (VGS = 4.5V)
Pb
Lead-free
APPLICATIONS
- N-channel enhancement mode effect transistor.
- Switching application.
ORDERING INFORMATION
Type No.
Marking
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
VGSS ID
IDM PD
Gate -Source voltage Continuous Drain Current A
Pulsed Drain Current a Power Dissipation
±20
@ TA = 25 ℃ 5.8 @ TA = 70 ℃ 4.9 64
TJ, Tstg
Junction and Storage Temperature
-55 to +150
Units V V
A A W ℃
C202 Rev.A
.gmesemi.
Production specification
N-Channel Enhancement Mode Field Effect Transistor...
