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BL3404 - N-Channel Power Mosfet

Key Features

  • Electrostatic Sensitive Devices.
  • VDS (V) = 30V.
  • ID = 5.8A.
  • RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) Pb Lead-free BL3404.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  Electrostatic Sensitive Devices.  VDS (V) = 30V  ID = 5.8A  RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) Pb Lead-free BL3404 APPLICATIONS  N-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL3404 3404 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 30 VGSS ID IDM PD Gate -Source voltage Continuous Drain CurrentA Pulsed Drain Current a Power Dissipation ±20 @ TA = 25 ℃ 5.8 @ TA = 70 ℃ 4.9 64 0.35 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃ C202 Rev.A www.gmesemi.