BL3404 Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor.
BL3404 Key Features
- Electrostatic Sensitive Devices
- VDS (V) = 30V
- ID = 5.8A
- RDS(ON) < 25mΩ (VGS = 10V)
| Part number | BL3404 |
|---|---|
| Datasheet | BL3404-GME.pdf |
| File Size | 337.95 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | N-Channel Power Mosfet |
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Production specification N-Channel Enhancement Mode Field Effect Transistor.
See all Galaxy Microelectronics datasheets
| Part Number | Description |
|---|---|
| BL3400 | N-Channel Power Mosfet |
| BL3401 | P-Channel High Density Trench MOSDET |
| BL3401L | P-Channel MOSDET |
| BL3402 | N-Channel Power Mosfet |
| BL3407 | P-Channel Power Mosfet |
| BL3415 | P-Channel Enhancement Mode MOSFET |
| BL3415-3L | P-Channel Enhancement Mode MOSFET |
| BL3428W | N-Channel Enhancement Mode MOSFET |
| BL3435 | P-Channel Power Mosfet |
| BL350N04-3DL8 | N-Channel Enhancement Mode MOSFET |