• Part: BL3407E
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 624.58 KB
Download BL3407E Datasheet PDF
Galaxy Microelectronics
BL3407E
Features - RDS(ON) ≤ 52mΩ@ VGS = -10V - RDS(ON) ≤ 87mΩ@ VGS = -4.5V - High-speed switching - Drive circuits can be simple - Parallel use is easy - JESD22-A114-B ESD rating of class 0 per human body model Typical Applications - Power Management in Note Book - Switching Application - Battery Powered System - Load switch Mechanical Data - Case: SOT-89 - Molding pound, UL Flammability Classification Rating 94V-0 - Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208 SOT-89 Ordering Information Part Number BL3407E Package SOT-89 Shipping Quantity 1000 pcs / Tape & Reel Marking Code 3407 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate -Source Voltage Continuous Drain Current TA = 25°C TA = 70°C Pulsed Drain Current (tp = 10μs, TA = 25°C) Single Pulse Avalanche Energy - 3 Power Dissipation TA = 25°C TC = 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDSS VGSS IDM EAS TJ...