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BL3407 - P-Channel Power Mosfet

Key Features

  • Electrostatic Sensitive Devices.
  • VDS (V) = - 30V.
  • ID = - 4.1.
  • RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) Pb Lead-free.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = - 30V  ID = - 4.1  RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL3407 3407 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -30 VGSS ID IDM PD RθJA Gate -Source voltage ±20 Continuous Drain CurrentA @ TA = 25 ℃ @ TA = 70 ℃ Pulsed Drain Current a Power Dissipation @ TA = 25 ℃ @ TA = 70 ℃ Thermal resistance,Junction-to-Ambient -4.1 -3.5 -20 1.