Galaxy Century Microelectronics BL3407
P-Channel Power Mosfet
| Part No. | BL3407 |
|---|---|
| Datasheet | BL3407 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | P-Channel Power Mosfet |
| Buy | Stock & Price |
FEATURES
● Electrostatic Sensitive Devices.● VDS (V) = - 30V
● ID = - 4.1
● RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) Pb Lead-free
APPLICATIONS
● P-channel enhancement mode effect transistor.● Switching application. ORDERING INFORMATION Type No. Marking BL3407 3407 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -30 VGSS ID IDM PD RθJA Gate -Source voltage ±20 Continuous Drain CurrentA @ TA = 25 ℃ @ TA = 70 ℃ Pulsed Drain Current a Power Dissipation @ TA = 25 ℃ @ TA = 70 ℃ Thermal resistance,Junction-to-Ambient -4.1 -3.5 -20 1.4 1 90 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V A A W ℃/W ℃ C301 Rev.A 1 Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407 ELECTRICAL CHARACTERISTIC
