BL3407 Overview
Production specification P-Channel Enhancement Mode Field Effect Transistor BL3407.
BL3407 Key Features
- Electrostatic Sensitive Devices
- VDS (V) =
- RDS(ON) < 52mΩ (VGS = -10V)
Datasheet Details
| Part number | BL3407 |
|---|---|
| Datasheet | BL3407-GME.pdf |
| File Size | 298.20 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | P-Channel Power Mosfet |
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