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BL8N40F - N-Channel Power Mosfet

Key Features

  • RDS(ON) =1.2Ω@VGS = 10V. Pb.
  • Ultra Low gate charge (typical 28nC) Lead-free.
  • Low reverse transfer capacitance (CRSS = typical 12.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness BL8N40F ITO-220AB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.2Ω@VGS = 10V. Pb  Ultra Low gate charge (typical 28nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 12.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL8N40F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDS Drain-Source voltage VGS Gate -Source voltage 400 ±30 ID Continuous Drain current TC=25℃ 8 EAS Single Pulse Avalanche Energy(Note2) 320 EAR Avalanche Energy,Repetitive(Note1) 2.5 Power Dissipation 39 PD Derate above 25°C 0.312 Units V V A mJ mJ W W/°C RθJC Junction-to-Case 3.18 ℃/W RθJA Junction-to-Ambient 62.