BL8N40F Datasheet | Galaxy Microelectronics

Production specification N-Channel Enhancement Mode Field Effect Transistor Features - RDS(ON) =1.2Ω@VGS = 10V. Pb - Ultra Low gate charge (typical 28n C) Lead-free - Low reverse transfer capacitance (CRSS = typical 12.0 p F) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDS Drain-Source voltage VGS Gate -Source voltage 400 ±30 ID Continuous Drain current TC=25℃ 8 Single Pulse Avalanche Energy(Note2) Avalanche Energy,Repetitive(Note1) Power Dissipation PD Derate above 25°C Units V V A m J m J W W/°C RθJC Junction-to-Case 3.18 ℃/W RθJA Junction-to-Ambient...