BL8N65F Datasheet | Galaxy Microelectronics

Production specification N-Channel Enhancement Mode Field Effect Transistor Features - RDS(ON) =1.4Ω@VGS = 10V. Pb - Ultra Low gate charge (typical 28n C) Lead-free - Low reverse transfer capacitance (CRSS = typical 12.0 p F) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage VGS Gate -Source voltage 650 ±30 Continuous Drain current TC=25℃ TC=100℃ 8 5.5 Single Pulse Avalanche Energy(Note2) 600 m J Avalanche Energy,Repetitive(Note1) 14.7 m J IAR Avalanche Current(Note2) 8A ISD Continuous Drain-Source Current ISM Pulsed Drain-Source Current 32 A...