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BL8N65F - N-Channel Power Mosfet

Key Features

  • RDS(ON) =1.4Ω@VGS = 10V. Pb.
  • Ultra Low gate charge (typical 28nC) Lead-free.
  • Low reverse transfer capacitance (CRSS = typical 12.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness BL8N65F ITO-220AB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.4Ω@VGS = 10V. Pb  Ultra Low gate charge (typical 28nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 12.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL8N65F ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage VGS Gate -Source voltage 650 ±30 V V ID Continuous Drain current TC=25℃ TC=100℃ 8 5.5 A EAS Single Pulse Avalanche Energy(Note2) 600 mJ EAR Avalanche Energy,Repetitive(Note1) 14.