BL8N65F Description
Production specification N-Channel Enhancement Mode Field Effect Transistor.
BL8N65F Key Features
- RDS(ON) =1.4Ω@VGS = 10V
- Ultra Low gate charge (typical 28nC)
- Low reverse transfer capacitance (CRSS = typical 12.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness