BL8N80F Datasheet | Galaxy Microelectronics

8A,800V N-Channel Power Mosfet Features - Typically 35 n C Low Gate Charge - 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V - Typically 13 p F Low Crss - Improved dv/dt Capability - Fast Switching Speed - 100% Avalanche Tested - Ro HS- pliant Product Pb Lead-free Production specification ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature TOPR, Tstg Operating and Storage...