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BL8N80F - N-Channel Power Mosfet

Key Features

  • Typically 35 nC Low Gate Charge.
  • 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V.
  • Typically 13 pF Low Crss.
  • Improved dv/dt Capability.
  • Fast Switching Speed.
  • 100% Avalanche Tested.
  • RoHS.
  • Compliant Product Pb Lead-free Production specification BL8N80F ITO-220AB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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8A,800V N-Channel Power Mosfet FEATURES  Typically 35 nC Low Gate Charge  8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V  Typically 13 pF Low Crss  Improved dv/dt Capability  Fast Switching Speed  100% Avalanche Tested  RoHS–Compliant Product Pb Lead-free Production specification BL8N80F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt PD Power Dissipation θJA Junction to Ambient θJC Junction to Case TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature Value 800 ±30 8 32 850 17.8 4.5 178 62.5 0.