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BL8N60F Datasheet N-channel Power MOSFET

Manufacturer: Galaxy Microelectronics

Overview: Production specification N-Channel Enhancement Mode Field Effect.

Key Features

  • RDS(ON) =1.2Ω@VGS = 10V. Pb.
  • Ultra Low gate charge (typical 28nC) Lead-free.
  • Low reverse transfer capacitance (CRSS = typical 12.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness BL8N60F ITO-220AB.

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