BL8N60F Datasheet | Galaxy Microelectronics

Production specification N-Channel Enhancement Mode Field Effect Transistor Features - RDS(ON) =1.2Ω@VGS = 10V. Pb - Ultra Low gate charge (typical 28n C) Lead-free - Low reverse transfer capacitance (CRSS = typical 12.0 p F) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage 600 V VGS Gate -Source voltage ±30 Continuous Drain current TC=25℃ 7.5 A Continuous Drain current TC=100℃ Single Pulse Avalanche Energy(Note2) 230 m J Avalanche Energy,Repetitive(Note1) 14.7 m J IAR Avalanche Current(Note2) 7.5 A ISD Continuous Drain-Source...