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BL8N60F - N-Channel Power Mosfet

Key Features

  • RDS(ON) =1.2Ω@VGS = 10V. Pb.
  • Ultra Low gate charge (typical 28nC) Lead-free.
  • Low reverse transfer capacitance (CRSS = typical 12.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness BL8N60F ITO-220AB.

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Full PDF Text Transcription (Reference)

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Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.2Ω@VGS = 10V. Pb  Ultra Low gate charge (typical 28nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 12.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL8N60F ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage 600 V VGS Gate -Source voltage ±30 V Continuous Drain current TC=25℃ 7.5 A ID Continuous Drain current TC=100℃ 4.6 A EAS Single Pulse Avalanche Energy(Note2) 230 mJ EAR Avalanche Energy,Repetitive(Note1) 14.7 mJ IAR Avalanche Current(Note2) 7.5 A ISD Continuous Drain-Source Current 7.