Galaxy Century Microelectronics MMDL770
Schottky Barrier Diode
| Part No. | MMDL770 |
|---|---|
| Datasheet | MMDL770 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Low reverse leakage—IR=200nA(Max.).● Very Low Capacitance—1.0pF @20V.
● Extremely Low minority carrier lifetime.
● High reverse leakage—70V(min.) Pb Lead-free MMDL770
APPLICATIONS
● For high-efficiency UHF and VHF detector applications. SOD-323 ORDERING INFORMATION Type No. Marking MMDL770 5H Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC Reverse Voltage VR 70 Power Dissipation Thermal resistance,junction to ambient air PD RθjA 200 635 Junction temperature Tj 150 Storage temperature TSTG -55 to+150 Unit V mW ℃/W ℃ ℃ B048 Rev.A 1 Production specification Schottky Barrier Diode MMDL770ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Reverse Breakdown Voltage Forward voltage Reverse current Capacitance between terminals Symbol V(BR)R VF IR CT Min. Typ. Max. Unit Conditions 70
