MMDL770 Datasheet | Galaxy Microelectronics

FEATURES - Low reverse leakage- IR=200n A(Max.). - Very Low Capacitance- 1.0p F @20V. - Extremely Low minority carrier lifetime. - High reverse leakage- 70V(min.) Pb Lead-free APPLICATIONS - For high-efficiency UHF and VHF detector applications. SOD-323 ORDERING INFORMATION Type No. Marking 5H Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits DC Reverse Voltage VR 70 Power Dissipation Thermal resistance,junction to ambient air PD Rθj A 200 635 Junction temperature Tj 150 Storage temperature TSTG -55 to+150 Unit V m W ℃/W ℃ ℃ B048 Rev.A .gmesemi. Production specification Schottky Barrier Diode ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse Breakdown Voltage Forward voltage Reverse current Capacitance between...