MMDL770 Overview
Production specification Schottky Barrier Diode.
MMDL770 Key Features
- Low reverse leakage-IR=200nA(Max.)
- Very Low Capacitance-1.0pF @20V
- Extremely Low minority carrier lifetime
- High reverse leakage-70V(min.)
MMDL770 Applications
- For high-efficiency UHF and VHF detector applications
