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TBL500N06-3DL8 - N-Channel Enhancement Mode MOSFET

Features

  • Advanced trench technology.
  • Low RDS(on).
  • Fast switching speed.
  • HBM: AEC-Q101-001: H1B (JESD22-A114-B: 1B).
  • RoHS compliant with Halogen-free.
  • Qualified to AEC-Q101 Standards Mechanical Data.
  • Case: PDFN3×3-8L.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number TBL500N06-3DL8 Package PDFN3×3-8L Shipping Quantity 5000.

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Full PDF Text Transcription

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N-Channel Enhancement Mode MOSFET TBL500N06-3DL8 Features  Advanced trench technology  Low RDS(on)  Fast switching speed  HBM: AEC-Q101-001: H1B (JESD22-A114-B: 1B)  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Mechanical Data  Case: PDFN3×3-8L  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number TBL500N06-3DL8 Package PDFN3×3-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 500N06 Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Continuous Drain Current (TA = 25°C) *1 Continu
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