TBL500N06-3DL8 Datasheet | Galaxy Microelectronics

N-Channel Enhancement Mode MOSFET TBL500N06-3DL8 Features - Advanced trench technology - Low RDS(on) - Fast switching speed - HBM: AEC-Q101-001: H1B (JESD22-A114-B: 1B) - RoHS pliant with Halogen-free - Qualified to AEC-Q101 Standards Mechanical Data - Case: PDFN3×3-8L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN3×3-8L Ordering Information Part Number TBL500N06-3DL8 Package PDFN3×3-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 500N06 Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain...