G60N04
Description
The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDSS RDS(ON) RDS(ON) ID
@4.5V (Typ) @ 10V (Typ)
45V
11 mΩ 9.7 mΩ 60A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Load switching
- Hard switched and high frequency circuits
- Uninterruptible power supply
.G60N04
Schematic diagram Marking and pin assignment
TO-252
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note...
