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G60N04 - MOSFET

General Description

The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 45V 11 mΩ 9.7 mΩ 60A.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number G60N04
Manufacturer GOFORD
File Size 1.29 MB
Description MOSFET
Datasheet download datasheet G60N04 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 45V 11 mΩ 9.7 mΩ 60A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply .