G60N06T
Description
The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
- 100% Avalanche Tested
- Ro HS pliant
60V 50A < 17mΩ < 21mΩ
Application
- Power switch
- DC/DC converters
Schematic diagram Marking and pin assignment
Device G60N06T
Package TO-220
Marking G60N06
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter Thermal Resistance, Junction-to-Case
(note1) （note3）
VDS ID IDM VGS PD EAS TJ, Tstg
Symbol Rth JC
TO-220 Packaging 50pcs/Tube
Value 60 50 200 ±20 85 42
-55 To 150
Value 1.8
Unit V A A V W m J ºC
Unit ºC/W
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