Datasheet4U.com

G60N06 - N-Channel Enhancement Mode Power MOSFET

Product Overview

📥 Download Datasheet

G60N06 N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G60N06

Datasheet Details

Part number	G60N06
Manufacturer	GOFORD
File Size	773.76 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G60N06 Datasheet
Note	This datasheet PDF includes multiple part numbers: G60N06, G60N06T. Please refer to the document for exact specifications by model.
Additional preview pages of the G60N06 datasheet.

Product details

Description

The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 60V 50A < 17mΩ < 21mΩ.

📁 Similar Datasheet

G60N100 - NPT IGBT (Fairchild Semiconductor)
G60N100BNTD - NPT IGBT (Fairchild Semiconductor)
G60N100CE - TSG60N100CE (Taiwan Semiconductor)
G601 - Manual Reset IC (Global Mixed-mode Technology)
G60T120 - IGBT (Infineon)
G60V60DF - Trench gate field-stop IGBT (STMicroelectronics)

Other Datasheets by GOFORD

G60N06T - N-Channel Enhancement Mode Power MOSFET
G60N04 - MOSFET
G60N04 - N-Channel Enhancement Mode Power MOSFET
G60N04D52 - Dual N-Channel Enhancement Mode Power MOSFET
G60N04K - N-Channel Enhancement Mode Power MOSFET
G60N10 - N-Channel Enhancement Mode Power MOSFET

Published: Nov 13, 2024 |