G60N06 - N-Channel Enhancement Mode Power MOSFET

Download the G60N06 datasheet PDF. This datasheet also covers the G60N06T variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 60V 50A < 17mΩ < 21mΩ.

📥 Download Datasheet

G60N06 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G60N06T-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G60N06
Manufacturer	GOFORD
File Size	773.76 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G60N06 Datasheet

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Other Datasheets by GOFORD

Part Number	Description
G60N06T	N-Channel Enhancement Mode Power MOSFET
G60N04	MOSFET
G60N04	N-Channel Enhancement Mode Power MOSFET
G60N04D52	Dual N-Channel Enhancement Mode Power MOSFET
G60N04K	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

G60N06T N-Channel Enhancement Mode Power MOSFET Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.