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G60N04 - N-Channel Enhancement Mode Power MOSFET

Download the G60N04 datasheet PDF. This datasheet also covers the G60N04K variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 40V 60A < 7mΩ < 9mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G60N04K-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G60N04
Manufacturer GOFORD
File Size 585.66 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G60N04 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G60N04 MOSFET
G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET
G60N04K N-Channel Enhancement Mode Power MOSFET
G60N06 N-Channel Enhancement Mode Power MOSFET
G60N06T N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.