G60N04
Description
The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
40V 60A < 7mΩ < 9mΩ l 100% Avalanche Tested l Ro HS pliant
Schematic diagram
Application l Power switch l DC/DC converters
Ordering Information
Device G60N04K
Package TO-252
Marking G60N04
TO-252
Packaging 2500pcs/Reel
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range
(note1) （note2）
VDS ID IDM VGS PD EAS TJ, Tstg
±20
73 m J
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Ambient Maximum Junction-to-Case
Rth JA Rth...
