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G900P15 - P-Channel Enhancement Mode Power MOSFET

Download the G900P15 datasheet PDF. This datasheet also covers the G900P15D5 variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -150V -60A < 80mΩ Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G900P15D5-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G900P15
Manufacturer GOFORD
File Size 972.05 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G900P15 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G900P15D5 P-Channel Enhancement Mode Power MOSFET
G900P15M P-Channel Enhancement Mode Power MOSFET
G900P15T P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G900P15D5 P-Channel Enhancement Mode Power MOSFET Description The G900P15D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.