Datasheet4U Logo Datasheet4U.com

G900P15T - P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -150V -60A < 80mΩ Schematic diagram.

📥 Download Datasheet

Datasheet Details

Part number G900P15T
Manufacturer GOFORD
File Size 886.29 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G900P15T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
G9001 500mA Low-Dropout Linear Regulators Global Mixed-mode Technology
G9002 300mA Low-Dropout Linear Regulators Global Mixed-mode Technology
G90 Relay Global Components
G901 3.3 V 300MA LOW DROPOUT REGULATOR Global Mixed-mode Technology
G9012 PNP EPITAXIAL TRANSISTOR GTM

Other Datasheets by GOFORD

Part Number Description
G900P15 P-Channel Enhancement Mode Power MOSFET
G900P15D5 P-Channel Enhancement Mode Power MOSFET
G900P15M P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G900P15T P-Channel Enhancement Mode Power MOSFET Description The G900P15T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.