G900P15M - P-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -150V -60A < 80mΩ Schematic diagram.

📥 Download Datasheet

G900P15M p-channel enhancement mode power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G900P15M
Manufacturer	GOFORD
File Size	857.78 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G900P15M Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
G9001	500mA Low-Dropout Linear Regulators	Global Mixed-mode Technology
G9002	300mA Low-Dropout Linear Regulators	Global Mixed-mode Technology
G90	Relay	Global Components
G901	3.3 V 300MA LOW DROPOUT REGULATOR	Global Mixed-mode Technology
G9012	PNP EPITAXIAL TRANSISTOR	GTM

Other Datasheets by GOFORD

Part Number	Description
G900P15	P-Channel Enhancement Mode Power MOSFET
G900P15D5	P-Channel Enhancement Mode Power MOSFET
G900P15T	P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

G900P15M P-Channel Enhancement Mode Power MOSFET Description The G900P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.