G900P15M Description
The G900P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G900P15M Key Features
- 150V -60A < 80mΩ
G900P15M Datasheet
| Part number | G900P15M |
|---|---|
| Download | G900P15M Datasheet (PDF) |
| File Size | 857.78 KB |
| Manufacturer | GOFORD |
| Description | P-Channel Enhancement Mode Power MOSFET |
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