GT023N10 Overview
The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
N-channel Enhancement Mode Power MOSFET
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GT023N10 |
|---|---|
| Manufacturer | GOFORD |
| File Size | 945.12 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | GT023N10 GT023N10M Datasheet (PDF) |
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The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| GT023N10M | N-Channel Enhancement Mode Power MOSFET |
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