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GT025N06AT - N-Channel Enhancement Mode Power MOSFET

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GT025N06AT N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – GT025N06AT

Datasheet Details

Part number	GT025N06AT
Manufacturer	GOFORD
File Size	634.07 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT025N06AT Datasheet
Additional preview pages of the GT025N06AT datasheet.

Product details

Description

The GT025N06AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 170A < 2.5mΩ < 3.2mΩ l 100% Avalanche Tested l RoHS Compliant Schematic Diagram.

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Published: Nov 3, 2024 |