Datasheet4U Logo Datasheet4U.com

GT025N06AT - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 170A < 2.5mΩ < 3.2mΩ l 100% Avalanche Tested l RoHS Compliant Schematic Diagram.

📥 Download Datasheet

Datasheet preview – GT025N06AT

Datasheet Details

Part number GT025N06AT
Manufacturer GOFORD
File Size 634.07 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT025N06AT Datasheet
Additional preview pages of the GT025N06AT datasheet.

📁 Similar Datasheet

  • GT02F16 - High Voltage Silicon Rectifier Diode (HVGT)
  • GT0001 - 1000 Base CX Transformer Modules (BESTJOB)
  • GT0002 - 1000 Base CX Transformer Modules (BESTJOB)
  • GT04 - Gate Drive Transformer (ice Components)
  • GT04-111 - Gate Drive Transformer (ice Components)
  • GT04-122 - Gate Drive Transformer (ice Components)
Other Datasheets by GOFORD
  • GT025N06AD5 - N-Channel Enhancement Mode Power MOSFET
  • GT025N06 - N-Channel Enhancement Mode Power MOSFET
  • GT023N10 - N-Channel Enhancement Mode Power MOSFET
  • GT023N10M - N-Channel Enhancement Mode Power MOSFET
  • GT007N04 - N-Channel Enhancement Mode Power MOSFET
  • GT007N04TL - N-Channel Enhancement Mode Power MOSFET
  • GT013N04 - N-Channel Enhancement Mode Power MOSFET
  • GT013N04T - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
GT025N06AT N-Channel Enhancement Mode Power MOSFET Description The GT025N06AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 170A < 2.5mΩ < 3.
Published: |