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GT023N10M - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 226A < 2.7mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Datasheet preview – GT023N10M

Datasheet Details

Part number GT023N10M
Manufacturer GOFORD
File Size 945.12 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT023N10M Datasheet
Additional preview pages of the GT023N10M datasheet.

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Full PDF Text Transcription

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GT023N10M N-Channel Enhancement Mode Power MOSFET Description The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 226A < 2.
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