GT023N10M Overview
The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
GT023N10M Details
| Part number | GT023N10M |
|---|---|
| Datasheet | GT023N10M Datasheet PDF (Download) |
| File Size | 945.12 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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