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GT023N10M - N-Channel Enhancement Mode Power MOSFET

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GT023N10M N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – GT023N10M

Datasheet Details

Part number	GT023N10M
Manufacturer	GOFORD
File Size	945.12 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT023N10M Datasheet
Additional preview pages of the GT023N10M datasheet.

Product details

Description

The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 100V 226A < 2.7mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Published: Nov 3, 2024 |