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GT025N06 - N-Channel Enhancement Mode Power MOSFET

Download the GT025N06 datasheet PDF. This datasheet also covers the GT025N06AT variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 170A < 2.5mΩ < 3.2mΩ l 100% Avalanche Tested l RoHS Compliant Schematic Diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT025N06AT-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT025N06
Manufacturer GOFORD
File Size 634.07 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT025N06 Datasheet

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Other Datasheets by GOFORD

Part Number Description
GT025N06AD5 N-Channel Enhancement Mode Power MOSFET
GT025N06AT N-Channel Enhancement Mode Power MOSFET
GT023N10 N-Channel Enhancement Mode Power MOSFET
GT023N10M N-Channel Enhancement Mode Power MOSFET
GT007N04 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GT025N06AT N-Channel Enhancement Mode Power MOSFET Description The GT025N06AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 170A < 2.5mΩ < 3.