Datasheet4U Logo Datasheet4U.com

GT035N06T - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 170A < 3.5mΩ < 4.5mΩ l 100% Avalanche Tested l RoHS Compliant.

📥 Download Datasheet

Datasheet preview – GT035N06T

Datasheet Details

Part number GT035N06T
Manufacturer GOFORD
File Size 621.06 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT035N06T Datasheet
Additional preview pages of the GT035N06T datasheet.

📁 Similar Datasheet

  • GT0001 - 1000 Base CX Transformer Modules (BESTJOB)
  • GT0002 - 1000 Base CX Transformer Modules (BESTJOB)
  • GT02F16 - High Voltage Silicon Rectifier Diode (HVGT)
  • GT04 - Gate Drive Transformer (ice Components)
  • GT04-111 - Gate Drive Transformer (ice Components)
  • GT04-122 - Gate Drive Transformer (ice Components)
Other Datasheets by GOFORD
  • GT035N06 - N-Channel Enhancement Mode Power MOSFET
  • GT007N04 - N-Channel Enhancement Mode Power MOSFET
  • GT007N04TL - N-Channel Enhancement Mode Power MOSFET
  • GT013N04 - N-Channel Enhancement Mode Power MOSFET
  • GT013N04T - N-Channel Enhancement Mode Power MOSFET
  • GT015N06 - N-Channel Enhancement Mode Power MOSFET
  • GT015N06TL - N-Channel Enhancement Mode Power MOSFET
  • GT016N10 - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
GT035N06T N-Channel Enhancement Mode Power MOSFET Description The GT035N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 170A < 3.5mΩ < 4.
Published: |