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GT080N08D5 - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 85V 65A < 8.5mΩ l 100% Avalanche Tested l RoHS Compliant.

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Datasheet preview – GT080N08D5

Datasheet Details

Part number GT080N08D5
Manufacturer GOFORD
File Size 935.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT080N08D5 Datasheet
Additional preview pages of the GT080N08D5 datasheet.

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Full PDF Text Transcription

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GT080N08D5 N-Channel Enhancement Mode Power MOSFET Description The GT080N08D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) 85V 65A < 8.
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