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GT088N06 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

This datasheet includes multiple variants, all published together in a single manufacturer document.

GT088N06 Overview

The GT088N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of

GT088N06 Key Features

  • VDS - ID (at VGS = 10V) - RDS(ON) (at VGS = 10V) - RDS(ON) (at VGS = 4.5V)
  • 100% Avalanche Tested
  • RoHS pliant
  • Synchronous Rectification in SMPS or LED Driver - UPS - Motor Control - BMS - High Frequency Circuit

GT088N06 Applications

  • VDS - ID (at VGS = 10V) - RDS(ON) (at VGS = 10V) - RDS(ON) (at VGS = 4.5V)
  • 100% Avalanche Tested
  • RoHS pliant
  • Synchronous Rectification in SMPS or LED Driver - UPS - Motor Control - BMS - High Frequency Circuit

GT088N06 Distributor