GT080N10 Overview
The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
GT080N10 Details
| Part number | GT080N10 |
|---|---|
| Datasheet | GT080N10 / GT080N10K Datasheet PDF (Download) |
| File Size | 640.99 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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