GT080N10 Overview
The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GT080N10 |
|---|---|
| Manufacturer | GOFORD |
| File Size | 640.99 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | GT080N10 GT080N10K Datasheet (PDF) |
|
|
|
The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of
| Part Number | Description |
|---|---|
| GT080N10K | N-Channel Enhancement Mode Power MOSFET |
| GT080N08 | N-Channel Enhancement Mode Power MOSFET |
| GT080N08D5 | N-Channel Enhancement Mode Power MOSFET |
| GT088N06 | N-Channel Enhancement Mode Power MOSFET |
| GT088N06T | N-Channel Enhancement Mode Power MOSFET |
| GT007N04 | N-Channel Enhancement Mode Power MOSFET |
| GT007N04TL | N-Channel Enhancement Mode Power MOSFET |
| GT013N04 | N-Channel Enhancement Mode Power MOSFET |
| GT013N04T | N-Channel Enhancement Mode Power MOSFET |
| GT015N06 | N-Channel Enhancement Mode Power MOSFET |