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GT080N10 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the GT080N10, a member of the GT080N10K N-Channel Enhancement Mode Power MOSFET family.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 65A < 8mΩ < 9.5mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Datasheet preview – GT080N10

Datasheet Details

Part number GT080N10
Manufacturer GOFORD
File Size 640.99 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT080N10 Datasheet
Additional preview pages of the GT080N10 datasheet.

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Full PDF Text Transcription

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GT080N10K N-Channel Enhancement Mode Power MOSFET Description The GT080N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 65A < 8mΩ < 9.
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