• Part: GT088N06T
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: GOFORD
  • Size: 521.52 KB
Download GT088N06T Datasheet PDF
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GT088N06T Key Features

  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V)
  • 100% Avalanche Tested
  • RoHS pliant
  • Synchronous Rectification in SMPS or LED Driver
  • Motor Control
  • High Frequency Circuit

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