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GT088N06T - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested 60V 60A < 9m Ω < 13 m Ω.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – GT088N06T

Datasheet Details

Part number GT088N06T
Manufacturer GOFORD
File Size 521.52 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT088N06T Datasheet
Additional preview pages of the GT088N06T datasheet.

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Full PDF Text Transcription

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GOFORD GT088N06T N-Channel Enhancement Mode Power MOSFET Description The GT088N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) ⚫ RDS(ON) (at VGS = 4.
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