BAS21H Datasheet | Good-Ark Semiconductor

Features - 50n S; Fast Switching Device (TRR <50 n S) - 200m W; Power Dissipation of 200m W - High Stability and High Reliability - Low reverse leakage Mechanical Data - SOD-323 Small Outline Plastic Package - Polarity: Color band denotes cathode end - Mounting Position: Any Pb Ro HS PLIANT Marking:JS SOD-323 Maximum Ratings& Thermal Characteristics (TA =25°C unless otherwise noted) Parameters Reverse Voltage Peak Reverse Voltage Power Dissipation Operating junction temperature Storage temperature range Thermal Resistance from Junction to Ambient Average Rectified Current Peak Forward Surge Cu rrent @tp=1us; TA=25 ℃ Symbol VR VRRM PD TJ TS RθJA IO IFSM Value 250 250 200 150 -55-+150 635 200 625 Valid provided that electrodes are kept at ambient temperature. Unit V V m W ℃ ℃ ℃/W m A m A Electrical Characteristics (TA =25°C unless otherwise noted) Parameter Symbols Test Condition Reverse Voltage Reverse Leakage Current Forward Voltage Reverse Recovery Time Capacitance V(BR) IR VF TRR Cj IR=100u A VR=200V IF=100m A IF=200m A IF = IR = 30m A, Irr=0.1XIR RL=100 Ω VR=0V, f=1MHZ Limits Min Max 1.00 1.25 50 5.0 Unit V u A V n S p...