GS8321E18E-V Overview
Key Features
- FT pin for user-configurable flow through or pipeline operation
- Dual Cycle Deselect (DCD) operation
- IEEE 1149.1 JTAG-compatible Boundary Scan
- 1.8 V or 2.5 V core power supply
- 1.8 V or 2.5 V I/O supply
| Part | GS8321E18E-V |
|---|---|
| Description | 36Mb Sync Burst SRAMs |
| Manufacturer | GSI Technology |
| Size | 724.12 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| N04L1630C2B | AMI SEMICONDUCTOR | 4Mb Ultra-Low Power Asynchronous CMOS SRAMs |
| N25S830HA | onsemi | 256 kb Low Power Serial SRAMs |
| N01L083WC2A | NanoAmp Solutions | Ultra-low Power SRAMs |