GS8321E18E Datasheet PDF (36Mb Sync Burst SRAMs) | Download GSI Technology GS8321E18E

GS8321E18E - 36Mb Sync Burst SRAMs

Description

Applications The GS8321E18/32/36E is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

FT pin for user-configurable flow through or pipeline operation.
Dual Cycle Deselect (DCD) operation.
IEEE 1149.1 JTAG-compatible Boundary Scan.
2.5 V or 3.3 V +10%/.
10% core power supply.
2.5 V or 3.3 V I/O supply.
LBO pin for Linear or Interleaved Burst mode.
Internal input resistors on mode pins allow floating mode pins.
Default to Interleaved Pipeline mode.
Byte Write (BW) and/or Global Write (GW) opera.

Datasheet Details

Part number	GS8321E18E
Manufacturer	GSI Technology
File Size	723.57 KB
Description	36Mb Sync Burst SRAMs
Datasheet	GS8321E18E Datasheet
Additional preview pages of the GS8321E18E datasheet.

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Full PDF Text Transcription

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GS8321E18/32/36E-250/225/200/166/150/133 165-Bump FP-BGA Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.

Published: Oct 14, 2016 |